{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10504790","patent":{"patent_number":"US-10504790","title":"Methods of forming conductive spacers for gate contacts and the resulting device","assignee":null,"inventors":[],"filing_date":"2017-07-25T00:00:00.000Z","publication_date":"2019-12-10T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":19,"abstract":"A method includes forming a first gate structure above a first region of a semiconducting substrate. A first sidewall spacer is formed adjacent the first gate structure. The first gate structure and the first sidewall spacer are recessed to define a first gate contact cavity. A second sidewall spacer is formed in the first gate contact cavity. A first conductive gate contact is formed in the first gate contact cavity. The second sidewall spacer is removed to define a first spacer cavity. A conductive material is formed in the first spacer cavity to form a first conductive spacer contacting the first conductive gate contact."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming conductive spacers for gate contacts and the resulting device","description":"A method includes forming a first gate structure above a first region of a semiconducting substrate. A first sidewall spacer is formed adjacent the first gate structure. The first gate structure and t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10504790","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10504790","citation_suggestion":"Patentable. \"Methods of forming conductive spacers for gate contacts and the resulting device\" (US-10504790). https://patentable.app/patents/US-10504790","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10504790","json":"https://patentable.app/api/llm-context/US-10504790","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:14:32.766Z"}