{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10504798","patent":{"patent_number":"US-10504798","title":"Gate cut in replacement metal gate process","assignee":null,"inventors":[],"filing_date":"2018-02-15T00:00:00.000Z","publication_date":"2019-12-10T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":5,"abstract":"Gate isolation methods and structures leverage the formation of a sidewall spacer layer within a recess formed in an organic planarization layer. The spacer layer enables precise alignment of the cut region of a sacrificial gate, which may be backfilled with an isolation layer. By forming the isolation layer after a reliability anneal of the gate dielectric and after formation of a first work function metal layer, both the desired critical dimension (CD) and alignment of the isolation layer can be achieved."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Gate cut in replacement metal gate process","description":"Gate isolation methods and structures leverage the formation of a sidewall spacer layer within a recess formed in an organic planarization layer. The spacer layer enables precise alignment of the cut ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10504798","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10504798","citation_suggestion":"Patentable. \"Gate cut in replacement metal gate process\" (US-10504798). https://patentable.app/patents/US-10504798","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10504798","json":"https://patentable.app/api/llm-context/US-10504798","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:23:45.046Z"}