{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10504842","patent":{"patent_number":"US-10504842","title":"Semiconductor device including superconducting metal through-silicon-vias","assignee":null,"inventors":[],"filing_date":"2018-06-06T00:00:00.000Z","publication_date":"2019-12-10T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A semiconductor structure and methods of forming the semiconductor structure generally includes providing a thermocompression bonded superconducting metal layer sandwiched between a first silicon substrate and a second silicon substrate. The second substrate includes a plurality of through silicon vias to the thermocompression bonded superconducting metal layer. A second superconducting metal is electroplated into the through silicon vias using the thermocompression bonded superconducting metal layer as a bottom electrode during the electroplating process, wherein the filling is from the bottom upwards."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device including superconducting metal through-silicon-vias","description":"A semiconductor structure and methods of forming the semiconductor structure generally includes providing a thermocompression bonded superconducting metal layer sandwiched between a first silicon subs","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10504842","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10504842","citation_suggestion":"Patentable. \"Semiconductor device including superconducting metal through-silicon-vias\" (US-10504842). https://patentable.app/patents/US-10504842","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10504842","json":"https://patentable.app/api/llm-context/US-10504842","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T08:43:57.294Z"}