{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10504845","patent":{"patent_number":"US-10504845","title":"Method for building up a fan-out RDL structure with fine pitch line-width and line-spacing","assignee":null,"inventors":[],"filing_date":"2018-04-17T00:00:00.000Z","publication_date":"2019-12-10T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A semiconductor device has a semiconductor die and an encapsulant deposited over the semiconductor die. A first insulating layer is formed over a first surface of the encapsulant and an active surface of the semiconductor die. A second insulating layer is formed over a second surface of the encapsulant opposite the first surface. A conductive layer is formed over the first insulating layer. The conductive layer includes a line-pitch or line-spacing of less than 5 μm. The active surface of the semiconductor die is recessed within the encapsulant. A third insulating layer is formed over the semiconductor die including a surface of the third insulating layer coplanar with a surface of the encapsulant. The second insulating layer is formed prior to forming the conductive layer. A trench is formed in the first insulating layer. The conductive layer is formed within the trench."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for building up a fan-out RDL structure with fine pitch line-width and line-spacing","description":"A semiconductor device has a semiconductor die and an encapsulant deposited over the semiconductor die. A first insulating layer is formed over a first surface of the encapsulant and an active surface","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10504845","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10504845","citation_suggestion":"Patentable. \"Method for building up a fan-out RDL structure with fine pitch line-width and line-spacing\" (US-10504845). https://patentable.app/patents/US-10504845","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10504845","json":"https://patentable.app/api/llm-context/US-10504845","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:14:18.362Z"}