{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10504899","patent":{"patent_number":"US-10504899","title":"Transistors with various threshold voltages and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2017-12-22T00:00:00.000Z","publication_date":"2019-12-10T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a first circuit and a second circuit. The first circuit includes a first gate, a first drain, and a first source. The second circuit includes a second gate, a second drain, and a second source. The first drain and the first source of the first circuit include a first doping material with a first concentration. A gate pitch and a gate critical dimension of the first gate of the first circuit are the same as a gate pitch and a gate critical dimension of the second gate of the second circuit. The second drain and the second source of the second circuit include a second doping material with a second concentration, wherein the first concentration is different from the second concentration."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Transistors with various threshold voltages and method for manufacturing the same","description":"A semiconductor device includes a first circuit and a second circuit. The first circuit includes a first gate, a first drain, and a first source. The second circuit includes a second gate, a second dr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10504899","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10504899","citation_suggestion":"Patentable. \"Transistors with various threshold voltages and method for manufacturing the same\" (US-10504899). https://patentable.app/patents/US-10504899","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10504899","json":"https://patentable.app/api/llm-context/US-10504899","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:57:24.230Z"}