{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10504908","patent":{"patent_number":"US-10504908","title":"High reliability OTP memory by using of voltage isolation in series","assignee":null,"inventors":[],"filing_date":"2016-02-18T00:00:00.000Z","publication_date":"2019-12-10T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":5,"abstract":"A high-reliability one-time programmable memory adopting series high voltage partition, which relates to integrated circuit technology and comprises a first MOS tube, a second MOS tube and an anti-fuse element, wherein a gate end of the first MOS tube is connected to a second connecting line (WS), a first connecting end of the first MOS tube is connected to a gate end of the second MOS tube and a voltage limiting device, and a second connecting end of the first MOS tube is connected to a third connecting line (BL); a first connecting end of the second MOS tube is connected to a fourth connecting line (BR), a second connecting end of the second MOS tube is connected to the third connecting line (BL), and a gate end of the second MOS tube is connected to the voltage limiting device and the second connecting end of the first MOS tube."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High reliability OTP memory by using of voltage isolation in series","description":"A high-reliability one-time programmable memory adopting series high voltage partition, which relates to integrated circuit technology and comprises a first MOS tube, a second MOS tube and an anti-fus","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10504908","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10504908","citation_suggestion":"Patentable. \"High reliability OTP memory by using of voltage isolation in series\" (US-10504908). https://patentable.app/patents/US-10504908","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10504908","json":"https://patentable.app/api/llm-context/US-10504908","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T18:59:46.028Z"}