{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10504995","patent":{"patent_number":"US-10504995","title":"Short-circuit performance for silicon carbide semiconductor device","assignee":null,"inventors":[],"filing_date":"2018-08-09T00:00:00.000Z","publication_date":"2019-12-10T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":16,"abstract":"A semiconductor device includes a source region configured to provide at least a portion of a MOSFET source of a MOSFET and at least a portion of a JFET source of a JFET. The semiconductor device includes a JFET channel region in series with the source region and a MOSFET channel region of the MOSFET, and disposed between a first JFET gate and a second JFET gate. The semiconductor device includes a JFET drain disposed at least partially between a gate insulator of a gate of the MOSFET and at least a portion of the JFET channel region, and in electrical contact with the first JFET gate and the second JFET gate. Various example implementations of this type of semiconductor device provide a SiC power MOSFET with improved short-circuit capability and durability, with minimal impact on RDS-ON."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Short-circuit performance for silicon carbide semiconductor device","description":"A semiconductor device includes a source region configured to provide at least a portion of a MOSFET source of a MOSFET and at least a portion of a JFET source of a JFET. The semiconductor device incl","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10504995","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10504995","citation_suggestion":"Patentable. \"Short-circuit performance for silicon carbide semiconductor device\" (US-10504995). https://patentable.app/patents/US-10504995","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10504995","json":"https://patentable.app/api/llm-context/US-10504995","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:04:01.198Z"}