{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10505000","patent":{"patent_number":"US-10505000","title":"Electronic device including a transistor structure having different semiconductor base materials","assignee":null,"inventors":[],"filing_date":"2017-12-28T00:00:00.000Z","publication_date":"2019-12-10T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"An electronic device can include a transistor structure. In an embodiment, the transistor structure can include a channel region and a drift structure including different semiconductor base materials. In another embodiment, the transistor structure can include a source region and a drain structure including a first region, wherein the source region and the first region include different semiconductor base materials and have the same conductivity type. In another aspect, a process of forming an electronic device can include forming a semiconductor layer; forming a body region; patterning the body region and the semiconductor layer to define a trench having a sidewall; forming a first region of a drain structure along the sidewall of the trench, wherein the first region and body region include different semiconductor base materials and different conductivity types."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Electronic device including a transistor structure having different semiconductor base materials","description":"An electronic device can include a transistor structure. In an embodiment, the transistor structure can include a channel region and a drift structure including different semiconductor base materials.","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10505000","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10505000","citation_suggestion":"Patentable. \"Electronic device including a transistor structure having different semiconductor base materials\" (US-10505000). https://patentable.app/patents/US-10505000","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10505000","json":"https://patentable.app/api/llm-context/US-10505000","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T22:11:33.060Z"}