{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10505004","patent":{"patent_number":"US-10505004","title":"Fabrication method of FinFET structure with composite gate helmet","assignee":null,"inventors":[],"filing_date":"2019-07-15T00:00:00.000Z","publication_date":"2019-12-10T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A method includes forming gate spacers and a first interlayer dielectric (ILD) layer over a fin structure, forming a metal gate structure between the gate spacers, selectively growing a metal cap on the metal gate structure, depositing a second ILD layer over the metal cap and the first ILD layer, performing a first chemical mechanical polish (CMP) process on the second ILD layer until the metal cap is exposed, replacing the metal cap with a dielectric cap, after replacing the metal cap with the dielectric cap, etching the second and first ILD layers until source/drain regions of the fin structure are exposed, and forming source/drain contacts respectively on the source/drain regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fabrication method of FinFET structure with composite gate helmet","description":"A method includes forming gate spacers and a first interlayer dielectric (ILD) layer over a fin structure, forming a metal gate structure between the gate spacers, selectively growing a metal cap on t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10505004","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10505004","citation_suggestion":"Patentable. \"Fabrication method of FinFET structure with composite gate helmet\" (US-10505004). https://patentable.app/patents/US-10505004","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10505004","json":"https://patentable.app/api/llm-context/US-10505004","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:35:12.497Z"}