{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10505005","patent":{"patent_number":"US-10505005","title":"Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers","assignee":null,"inventors":[],"filing_date":"2017-08-23T00:00:00.000Z","publication_date":"2019-12-10T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"Techniques for reducing the specific contact resistance of metal—semiconductor (group IV) junctions by interposing a monolayer of group V or group III atoms at the interface between the metal and the semiconductor, or interposing a bi-layer made of one monolayer of each, or interposing multiple such bi-layers. The resulting low specific resistance metal—group IV semiconductor junctions find application as a low resistance electrode in semiconductor devices including electronic devices (e.g., transistors, diodes, etc.) and optoelectronic devices (e.g., lasers, solar cells, photodetectors, etc.) and/or as a metal source and/or drain region (or a portion thereof) in a field effect transistor (FET). The monolayers of group III and group V atoms are predominantly ordered layers of atoms formed on the surface of the group IV semiconductor and chemically bonded to the surface atoms of the group IV semiconductor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers","description":"Techniques for reducing the specific contact resistance of metal—semiconductor (group IV) junctions by interposing a monolayer of group V or group III atoms at the interface between the metal and the ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10505005","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10505005","citation_suggestion":"Patentable. \"Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers\" (US-10505005). https://patentable.app/patents/US-10505005","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10505005","json":"https://patentable.app/api/llm-context/US-10505005","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:21:28.014Z"}