{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10505008","patent":{"patent_number":"US-10505008","title":"Method for manufacturing insulated gate field effect transistor","assignee":null,"inventors":[],"filing_date":"2018-05-17T00:00:00.000Z","publication_date":"2019-12-10T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":11,"abstract":"An insulated gate field effect transistor with (a) a base having source/drain regions, a channel forming region, a gate insulating film formed on the channel forming region, an insulating layer covering the source/drain regions, and a gate electrode formation opening provided in a partial portion of the insulating layer above the channel forming region; (b) a gate electrode formed by burying a conducive material layer in the gate electrode formation opening; (c) a first interlayer insulating layer formed on the insulating layer and the gate electrode and containing no oxygen atom as a constituent element; and (d) a second interlayer insulating layer on the first interlayer insulating layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing insulated gate field effect transistor","description":"An insulated gate field effect transistor with (a) a base having source/drain regions, a channel forming region, a gate insulating film formed on the channel forming region, an insulating layer coveri","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10505008","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10505008","citation_suggestion":"Patentable. \"Method for manufacturing insulated gate field effect transistor\" (US-10505008). https://patentable.app/patents/US-10505008","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10505008","json":"https://patentable.app/api/llm-context/US-10505008","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:26:17.367Z"}