{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10505013","patent":{"patent_number":"US-10505013","title":"Process of forming epitaxial substrate having N-polar gallium nitride","assignee":null,"inventors":[],"filing_date":"2018-07-20T00:00:00.000Z","publication_date":"2019-12-10T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"A process of forming a high electron mobility transistor (HEMT) with a reverse arrangement for the barrier layer and the channel layer thereof is disclosed. The process includes steps of epitaxially growing an oxide layer containing zinc (Zn) on a substrate where the oxide layer shows an O-polar surface; epitaxially growing a semiconductor stack made of nitride semiconductor materials on the oxide layer where the semiconductor stack includes a nitride semiconductor layer, a barrier layer and a channel layer on the oxide layer in this order; attaching a temporal substrate to the semiconductor stack; removing the substrate and the oxide layer from the semiconductor stack; attaching a support substrate to the nitride semiconductor layer; and removing the temporal substrate from the semiconductor stack."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Process of forming epitaxial substrate having N-polar gallium nitride","description":"A process of forming a high electron mobility transistor (HEMT) with a reverse arrangement for the barrier layer and the channel layer thereof is disclosed. The process includes steps of epitaxially g","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10505013","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10505013","citation_suggestion":"Patentable. \"Process of forming epitaxial substrate having N-polar gallium nitride\" (US-10505013). https://patentable.app/patents/US-10505013","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10505013","json":"https://patentable.app/api/llm-context/US-10505013","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T07:01:06.571Z"}