{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10505020","patent":{"patent_number":"US-10505020","title":"FinFET LDMOS devices with improved reliability","assignee":null,"inventors":[],"filing_date":"2017-10-05T00:00:00.000Z","publication_date":"2019-12-10T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":19,"abstract":"A finFET LDMOS semiconductor device includes a first well disposed adjacent to a second well on a substrate and a third well disposed on the substrate, wherein the second well is disposed between the first well and the third well. Additionally, the finFET LDMOS semiconductor device includes a source disposed on the first well, a fin at least partially disposed on the first well and adjacent to the source, a drain disposed on the third well, a shallow trench isolation (STI) disposed at least partially in the third well, and a STI protection structure disposed on the substrate between the second well and the third well and along a side of the STI that is closest to the source, wherein the STI protection structure is configured to discourage a drain to source current from flowing along the side of the STI that is closest to the source."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFET LDMOS devices with improved reliability","description":"A finFET LDMOS semiconductor device includes a first well disposed adjacent to a second well on a substrate and a third well disposed on the substrate, wherein the second well is disposed between the ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10505020","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10505020","citation_suggestion":"Patentable. \"FinFET LDMOS devices with improved reliability\" (US-10505020). https://patentable.app/patents/US-10505020","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10505020","json":"https://patentable.app/api/llm-context/US-10505020","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:24:27.628Z"}