{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10505023","patent":{"patent_number":"US-10505023","title":"Structure and formation method of semiconductor device structure with a dummy fin structure","assignee":null,"inventors":[],"filing_date":"2018-12-03T00:00:00.000Z","publication_date":"2019-12-10T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"Structures and formation methods of a semiconductor device structure are provided. The method includes forming a first fin structure and a second fin structure over a semiconductor substrate, and forming a mask layer covering the first fin structure and the second fin structure. The method also includes performing a first etching operation using the second fin structure as an etch stop layer to partially remove the mask layer such that the etch stop layer protrudes from the mask layer after the first etching operation. The method further includes partially removing the second fin structure using a second etching operation after the first etching operation."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Structure and formation method of semiconductor device structure with a dummy fin structure","description":"Structures and formation methods of a semiconductor device structure are provided. The method includes forming a first fin structure and a second fin structure over a semiconductor substrate, and form","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10505023","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10505023","citation_suggestion":"Patentable. \"Structure and formation method of semiconductor device structure with a dummy fin structure\" (US-10505023). https://patentable.app/patents/US-10505023","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10505023","json":"https://patentable.app/api/llm-context/US-10505023","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:00:33.707Z"}