{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10505032","patent":{"patent_number":"US-10505032","title":"Semiconductor device with III-nitride channel region and silicon carbide drift region","assignee":null,"inventors":[],"filing_date":"2016-10-28T00:00:00.000Z","publication_date":"2019-12-10T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":25,"abstract":"Techniques are provided for forming a semiconductor device. In an aspect, a semiconductor device is provided that includes a silicon carbide (SiC) structure and a III-nitride structure. The SiC structure includes a drain electrode, a substrate layer that is formed on the drain electrode and includes SiC, and a drift layer formed on the substrate layer. The drift layer includes p-well regions that allow current to flow through a region between the p-well regions. The III-nitride structure includes a set of III-nitride semiconductor layers formed on the SiC structure, a passivation layer formed on the set of III-nitride semiconductor layers, a source electrode electrically coupled to the p-well regions, and gate electrodes electrically isolated from the set of III-nitride semiconductor layers. In an aspect, the SiC structure includes a transition layer that includes connecting regions. In another aspect, the III-nitride structures includes connection electrodes electrically coupled to the connecting regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with III-nitride channel region and silicon carbide drift region","description":"Techniques are provided for forming a semiconductor device. In an aspect, a semiconductor device is provided that includes a silicon carbide (SiC) structure and a III-nitride structure. The SiC struct","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10505032","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10505032","citation_suggestion":"Patentable. \"Semiconductor device with III-nitride channel region and silicon carbide drift region\" (US-10505032). https://patentable.app/patents/US-10505032","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10505032","json":"https://patentable.app/api/llm-context/US-10505032","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:57:15.280Z"}