{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10505039","patent":{"patent_number":"US-10505039","title":"Semiconductor device and method for forming the same","assignee":null,"inventors":[],"filing_date":"2019-07-11T00:00:00.000Z","publication_date":"2019-12-10T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"A method of forming a semiconductor structure is disclosed, comprising providing a substrate, forming at least a gate trench extending along a first direction in the substrate, forming a gate dielectric layer conformally covering the gate trench, forming a sacrificial layer on the gate dielectric layer and completely filling the gate trench, forming a plurality of openings through the sacrificial layer in the gate trench thereby exposing a portion of the gate dielectric layer, forming a dielectric material in the openings, performing an etching back process to remove a portion of the dielectric material until the dielectric material only remains at a lower portion of each of the openings thereby obtaining a plurality of intervening structures, removing the sacrificial layer, and forming a gate metal filling the gate trench, wherein the intervening structures are disposed between the gate metal and the gate dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method for forming the same","description":"A method of forming a semiconductor structure is disclosed, comprising providing a substrate, forming at least a gate trench extending along a first direction in the substrate, forming a gate dielectr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10505039","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10505039","citation_suggestion":"Patentable. \"Semiconductor device and method for forming the same\" (US-10505039). https://patentable.app/patents/US-10505039","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10505039","json":"https://patentable.app/api/llm-context/US-10505039","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:35:45.409Z"}