{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10505045","patent":{"patent_number":"US-10505045","title":"Fin field effect transistor (FinFET) device structure with conductive layer between gate and gate contact","assignee":null,"inventors":[],"filing_date":"2017-11-24T00:00:00.000Z","publication_date":"2019-12-10T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A FinFET device structure is provided. The FinFET device structure includes a fin structure formed over a substrate and a gate dielectric layer formed over the fin structure. The FinFET device structure includes a gate electrode layer formed over the gate dielectric later and a gate contact structure formed over the gate electrode layer. The gate contact structure includes a first conductive layer formed over the gate electrode layer, a barrier layer formed over the first conductive layer and a second conductive layer over the barrier layer. The second conductive layer is electrically connected to the gate electrode layer by the first conductive layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fin field effect transistor (FinFET) device structure with conductive layer between gate and gate contact","description":"A FinFET device structure is provided. The FinFET device structure includes a fin structure formed over a substrate and a gate dielectric layer formed over the fin structure. The FinFET device structu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10505045","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10505045","citation_suggestion":"Patentable. \"Fin field effect transistor (FinFET) device structure with conductive layer between gate and gate contact\" (US-10505045). https://patentable.app/patents/US-10505045","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10505045","json":"https://patentable.app/api/llm-context/US-10505045","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:39:02.239Z"}