{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10508361","patent":{"patent_number":"US-10508361","title":"Method for manufacturing semiconductor wafer","assignee":null,"inventors":[],"filing_date":"2016-11-08T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":11,"abstract":"In a first step, protrusions (42) are formed on a surface of an SiC substrate (40), and the SiC substrate (40) is etched. In a second step, the protrusions (42) of the SiC substrate (40) are epitaxially grown through MSE process, and an epitaxial layer (43a) containing threading screw dislocation, which has been largely grown in the vertical (c-axis) direction as a result of MSE process, is at least partially removed. In a third step, MSE process is performed again on the SiC substrate (40) after the second step, to cause epitaxial layers (43) containing no threading screw dislocation to be grown in the horizontal (a-axis) direction to be connected at the molecular level, so that one monocrystalline 4H—SiC semiconductor wafer (45) having a large area is generated throughout an Si-face or a C-face of the SiC substrate (40)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing semiconductor wafer","description":"In a first step, protrusions (42) are formed on a surface of an SiC substrate (40), and the SiC substrate (40) is etched. In a second step, the protrusions (42) of the SiC substrate (40) are epitaxial","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10508361","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10508361","citation_suggestion":"Patentable. \"Method for manufacturing semiconductor wafer\" (US-10508361). https://patentable.app/patents/US-10508361","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10508361","json":"https://patentable.app/api/llm-context/US-10508361","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T07:41:39.848Z"}