{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510390","patent":{"patent_number":"US-10510390","title":"Magnetic exchange coupled MTJ free layer having low switching current and high data retention","assignee":null,"inventors":[],"filing_date":"2017-06-07T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":22,"abstract":"Embodiments of the invention are directed to a magnetic tunnel junction (MTJ) storage element that includes a reference layer, a tunnel barrier and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The reference layer has a fixed magnetization direction. The free layer includes a first region, a second region and a third region. The third region is formed from a third material that is configured to magnetically couple the first region and the second region. The first region is formed from a first material having a first predetermined magnetic moment, and the second region is formed from a second material having a second predetermined magnetic moment. The first predetermined magnetic moment is lower that the second predetermined magnetic moment."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magnetic exchange coupled MTJ free layer having low switching current and high data retention","description":"Embodiments of the invention are directed to a magnetic tunnel junction (MTJ) storage element that includes a reference layer, a tunnel barrier and a free layer on an opposite side of the tunnel barri","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510390","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510390","citation_suggestion":"Patentable. \"Magnetic exchange coupled MTJ free layer having low switching current and high data retention\" (US-10510390). https://patentable.app/patents/US-10510390","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510390","json":"https://patentable.app/api/llm-context/US-10510390","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:52:15.816Z"}