{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510410","patent":{"patent_number":"US-10510410","title":"Method for programming resistive memory cell with AC perturbation AC signal and nonvolatile memory device thereof","assignee":null,"inventors":[],"filing_date":"2018-02-26T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"In the disclosure, a non-volatile memory device includes a resistive memory cell and a write and read circuit. The write and read circuit is coupled to the resistive memory cell and configured to combine a perturbation AC signal with a first writing signal, so as to generate a second writing signal. Then, the write and read circuit applies the second writing signal to the resistive memory cell to program the resistive memory cell. The combination of the oscillation signal and the first writing signal (constant DC signal) and AC signal would penetrate the shielding effect of the insulating layer and free the stuck charges."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for programming resistive memory cell with AC perturbation AC signal and nonvolatile memory device thereof","description":"In the disclosure, a non-volatile memory device includes a resistive memory cell and a write and read circuit. The write and read circuit is coupled to the resistive memory cell and configured to comb","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510410","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510410","citation_suggestion":"Patentable. \"Method for programming resistive memory cell with AC perturbation AC signal and nonvolatile memory device thereof\" (US-10510410). https://patentable.app/patents/US-10510410","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510410","json":"https://patentable.app/api/llm-context/US-10510410","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:17:32.961Z"}