{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510424","patent":{"patent_number":"US-10510424","title":"Semiconductor memory device for improving differences between current characteristics of memory cells","assignee":null,"inventors":[],"filing_date":"2016-10-19T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":7,"abstract":"Provided herein is a semiconductor memory device. The semiconductor memory device may include: a memory cell array including a plurality of pages; a voltage supply unit configured to provide operating voltages to the plurality of pages; a plurality of page buffers coupled to a plurality of bit lines of the memory cell array and configured to control and sense currents flowing through the plurality of bit lines in response to a page buffer sensing signal; and a control logic configured to control the voltage supply unit and the plurality of page buffers such that the plurality of pages are successively programmed, and to control a potential level of the page buffer sensing signal depending on a program sequence of the plurality of pages during a program verify operation of a program operation."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device for improving differences between current characteristics of memory cells","description":"Provided herein is a semiconductor memory device. The semiconductor memory device may include: a memory cell array including a plurality of pages; a voltage supply unit configured to provide operating","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510424","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510424","citation_suggestion":"Patentable. \"Semiconductor memory device for improving differences between current characteristics of memory cells\" (US-10510424). https://patentable.app/patents/US-10510424","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510424","json":"https://patentable.app/api/llm-context/US-10510424","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:00:17.447Z"}