{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510427","patent":{"patent_number":"US-10510427","title":"High reliable OTP memory with low reading voltage","assignee":null,"inventors":[],"filing_date":"2016-02-18T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","H01L"],"num_claims":5,"abstract":"The present invention relates to the technical field of integrated circuits. Disclosed is a one-time programmable memory with a high reliability and a low reading voltage, comprising: a first MOS transistor, a second MOS transistor, and an antifuse component. A gate terminal of the first MOS transistor is connected to a second connecting line (WS), a first connection terminal of the first MOS transistor is connected to the antifuse component, the antifuse component is connected to a first connecting line (WP), and a second connection terminal of the first MOS transistor is connected to a third connecting line (BL). A first connection terminal of the second MOS transistor is connected to a fourth connecting line (BR), and a second connection terminal of the second MOS transistor is connected to a third connecting line (BL). The invention further comprises a voltage limiting device with a control terminal and two connection terminals."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High reliable OTP memory with low reading voltage","description":"The present invention relates to the technical field of integrated circuits. Disclosed is a one-time programmable memory with a high reliability and a low reading voltage, comprising: a first MOS tran","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510427","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510427","citation_suggestion":"Patentable. \"High reliable OTP memory with low reading voltage\" (US-10510427). https://patentable.app/patents/US-10510427","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510427","json":"https://patentable.app/api/llm-context/US-10510427","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T10:00:27.038Z"}