{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510531","patent":{"patent_number":"US-10510531","title":"Method of fabrication of a semiconductor element comprising a highly resistive substrate","assignee":null,"inventors":[],"filing_date":"2017-11-03T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"A method of fabrication of a semiconductor element includes a step of rapid heat treatment in which a substrate comprising a base having a resistivity greater than 1000 Ohm·cm is exposed to a peak temperature sufficient to deteriorate the resistivity of the base. The step of rapid heat treatment is followed by a curing heat treatment in which the substrate is exposed to a curing temperature between 800° C. and 1250° C. and then cooled at a cooldown rate less than 5° C./second when the curing temperature is between 1250° C. and 1150° C., less than 20° C./second when the curing temperature is between 1150° C. and 1100° C., and less than 50° C./second when the curing temperature is between 1100° C. and 800° C."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of fabrication of a semiconductor element comprising a highly resistive substrate","description":"A method of fabrication of a semiconductor element includes a step of rapid heat treatment in which a substrate comprising a base having a resistivity greater than 1000 Ohm·cm is exposed to a peak tem","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510531","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510531","citation_suggestion":"Patentable. \"Method of fabrication of a semiconductor element comprising a highly resistive substrate\" (US-10510531). https://patentable.app/patents/US-10510531","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510531","json":"https://patentable.app/api/llm-context/US-10510531","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:58:44.948Z"}