{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510532","patent":{"patent_number":"US-10510532","title":"Method for manufacturing gallium nitride substrate using the multi ion implantation","assignee":null,"inventors":[],"filing_date":"2018-05-29T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"Disclosed is a method of fabricating a gallium nitride substrate using a plurality of ion implantation processes. A method of fabricating a gallium nitride substrate using a plurality of ion implantation processes according to an embodiment of the present disclosure includes a step of forming a bonding oxide film on the first gallium nitride; a step of performing first ion implantation for a surface of the first gallium nitride, on which the bonding oxide film is formed, at least once to form a damaged layer, thereby releasing bowing of the first gallium nitride; a step of performing second ion implantation for the surface of the first gallium nitride, on which the bonding oxide film is formed, to form a blister layer; a step of bonding the bonding oxide film of the first gallium nitride to a temporary substrate; a step of separating the first gallium nitride using the blister layer to form a seed layer; and a step of allowing growth of the second gallium nitride using the seed layer to form bulk gallium nitride."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing gallium nitride substrate using the multi ion implantation","description":"Disclosed is a method of fabricating a gallium nitride substrate using a plurality of ion implantation processes. A method of fabricating a gallium nitride substrate using a plurality of ion implantat","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510532","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510532","citation_suggestion":"Patentable. \"Method for manufacturing gallium nitride substrate using the multi ion implantation\" (US-10510532). https://patentable.app/patents/US-10510532","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510532","json":"https://patentable.app/api/llm-context/US-10510532","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T08:29:57.532Z"}