{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510539","patent":{"patent_number":"US-10510539","title":"Fin field effect transistor (FinFET) device with controlled end-to-end critical dimension and method for forming the same","assignee":null,"inventors":[],"filing_date":"2016-11-28T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":23,"abstract":"A method for forming a fin field effect transistor (FinFET) device structure is provided. The FinFET device structure includes a substrate and a first fin structure and a second fin structure extending above the substrate. The FinFET device structure also includes a first transistor formed on the first fin structure and a second transistor formed on the second fin structure. The FinFET device structure further includes an inter-layer dielectric (ILD) structure formed in an end-to-end gap between the first transistor and the second transistor, and the end-to-end gap has a width in a range from about 20 nm to about 40 nm."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fin field effect transistor (FinFET) device with controlled end-to-end critical dimension and method for forming the same","description":"A method for forming a fin field effect transistor (FinFET) device structure is provided. The FinFET device structure includes a substrate and a first fin structure and a second fin structure extendin","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510539","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510539","citation_suggestion":"Patentable. \"Fin field effect transistor (FinFET) device with controlled end-to-end critical dimension and method for forming the same\" (US-10510539). https://patentable.app/patents/US-10510539","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510539","json":"https://patentable.app/api/llm-context/US-10510539","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:21:20.155Z"}