{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510540","patent":{"patent_number":"US-10510540","title":"Mask scheme for cut pattern flow with enlarged EPE window","assignee":null,"inventors":[],"filing_date":"2018-07-12T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Methods of forming semiconductor devices comprising etching a hardmask and spin-on-carbon layer through an opening in a photoresist to expose a gapfill material. The photoresist, spin-on-carbon layer and gapfill material are removed. A new spin-on-carbon layer, hardmask and photoresist are formed with an opening over a spacer mandrel. The hardmask, spin-on-carbon layer are etched through the opening and the layers and spacer mandrel are removed. An etch stop layer and oxide layer are removed and a height of the spacer mandrel and gapfill material are reduced exposing portions of the substrate. The exposed portions of the substrate are fin etched and the layers removed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Mask scheme for cut pattern flow with enlarged EPE window","description":"Methods of forming semiconductor devices comprising etching a hardmask and spin-on-carbon layer through an opening in a photoresist to expose a gapfill material. The photoresist, spin-on-carbon layer ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510540","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510540","citation_suggestion":"Patentable. \"Mask scheme for cut pattern flow with enlarged EPE window\" (US-10510540). https://patentable.app/patents/US-10510540","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510540","json":"https://patentable.app/api/llm-context/US-10510540","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T13:23:14.030Z"}