{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510555","patent":{"patent_number":"US-10510555","title":"Mechanism for manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2018-08-03T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for manufacturing a semiconductor device includes forming a gate electrode over a substrate; forming a hard mask over the gate electrode, in which the hard mask comprises a metal oxide; forming an interlayer dielectric (ILD) layer over the hard mask; forming a contact hole in the ILD layer, wherein the contact hole exposes a source/drain; filling the contact hole with a conductive material; and applying a chemical mechanical polish process to the ILD layer and the conductive material, wherein the chemical mechanical polish process stops at the hard mask, the chemical mechanical polish process uses a slurry containing a boric acid or its derivative, the chemical mechanical polish process has a first removal rate of the ILD layer and a second removal rate of the hard mask, and a first ratio of the first removal rate to the second removal rate is greater than about 5."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Mechanism for manufacturing semiconductor device","description":"A method for manufacturing a semiconductor device includes forming a gate electrode over a substrate; forming a hard mask over the gate electrode, in which the hard mask comprises a metal oxide; formi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510555","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510555","citation_suggestion":"Patentable. \"Mechanism for manufacturing semiconductor device\" (US-10510555). https://patentable.app/patents/US-10510555","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510555","json":"https://patentable.app/api/llm-context/US-10510555","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:14:40.887Z"}