{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510589","patent":{"patent_number":"US-10510589","title":"Cyclic conformal deposition/anneal/etch for Si gapfill","assignee":null,"inventors":[],"filing_date":"2018-05-29T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Methods for seam and void-free gapfilling, such as gapfilling high aspect ratio trenches with amorphous silicon, are provided. A method generally includes depositing amorphous silicon over a semiconductor device having one or more features thereon, annealing the deposited amorphous silicon to heal one or more seams in the deposited amorphous silicon between the one or more features, and etching the annealed amorphous silicon to remove one or more voids in the annealed amorphous silicon between the one or more features. The deposition, anneal, and etch processes are generally repeated any suitable number of times to achieve amorphous silicon gapfill without any seam or void between the one or more features."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Cyclic conformal deposition/anneal/etch for Si gapfill","description":"Methods for seam and void-free gapfilling, such as gapfilling high aspect ratio trenches with amorphous silicon, are provided. A method generally includes depositing amorphous silicon over a semicondu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510589","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510589","citation_suggestion":"Patentable. \"Cyclic conformal deposition/anneal/etch for Si gapfill\" (US-10510589). https://patentable.app/patents/US-10510589","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510589","json":"https://patentable.app/api/llm-context/US-10510589","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T08:43:49.106Z"}