{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510598","patent":{"patent_number":"US-10510598","title":"Self-aligned spacers and method forming same","assignee":null,"inventors":[],"filing_date":"2016-12-21T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method includes forming a bottom source/drain contact plug in a bottom inter-layer dielectric. The bottom source/drain contact plug is electrically coupled to a source/drain region of a transistor. The method further includes forming an inter-layer dielectric overlying the bottom source/drain contact plug. A source/drain contact opening is formed in the inter-layer dielectric, with the bottom source/drain contact plug exposed through the source/drain contact opening. A dielectric spacer layer is formed to have a first portion extending into the source/drain contact opening and a second portion over the inter-layer dielectric. An anisotropic etching is performed on the dielectric spacer layer, and a remaining vertical portion of the dielectric spacer layer forms a source/drain contact spacer. The remaining portion of the source/drain contact opening is filled to form an upper source/drain contact plug."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Self-aligned spacers and method forming same","description":"A method includes forming a bottom source/drain contact plug in a bottom inter-layer dielectric. The bottom source/drain contact plug is electrically coupled to a source/drain region of a transistor. ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510598","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510598","citation_suggestion":"Patentable. \"Self-aligned spacers and method forming same\" (US-10510598). https://patentable.app/patents/US-10510598","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510598","json":"https://patentable.app/api/llm-context/US-10510598","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:05:51.776Z"}