{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510615","patent":{"patent_number":"US-10510615","title":"FinFET devices and methods of forming the same","assignee":null,"inventors":[],"filing_date":"2016-11-29T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of manufacturing a semiconductor device includes forming a semiconductor strip protruding above a substrate, forming isolation regions on opposing sides of the semiconductor strip, recessing the isolation regions in a first chamber using a first etching process, and increasing a planarity of the isolation regions in the first chamber using a second etching process."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFET devices and methods of forming the same","description":"A method of manufacturing a semiconductor device includes forming a semiconductor strip protruding above a substrate, forming isolation regions on opposing sides of the semiconductor strip, recessing ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510615","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510615","citation_suggestion":"Patentable. \"FinFET devices and methods of forming the same\" (US-10510615). https://patentable.app/patents/US-10510615","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510615","json":"https://patentable.app/api/llm-context/US-10510615","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:44:42.491Z"}