{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510645","patent":{"patent_number":"US-10510645","title":"Planarizing RDLs in RDL-first processes through CMP process","assignee":null,"inventors":[],"filing_date":"2018-04-30T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method includes forming a buffer dielectric layer over a carrier, and forming a first dielectric layer and a first redistribution line over the buffer dielectric layer. The first redistribution line is in the first dielectric layer. The method further includes performing a planarization on the first dielectric layer to level a top surface of the first dielectric layer, forming a metal post over and electrically coupling to the first redistribution line, and encapsulating the metal post in an encapsulating material. The encapsulating material contacts a top surface of the planarized top surface of the first dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Planarizing RDLs in RDL-first processes through CMP process","description":"A method includes forming a buffer dielectric layer over a carrier, and forming a first dielectric layer and a first redistribution line over the buffer dielectric layer. The first redistribution line","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510645","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510645","citation_suggestion":"Patentable. \"Planarizing RDLs in RDL-first processes through CMP process\" (US-10510645). https://patentable.app/patents/US-10510645","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510645","json":"https://patentable.app/api/llm-context/US-10510645","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:38:20.623Z"}