{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510652","patent":{"patent_number":"US-10510652","title":"Method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-08-15T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of manufacturing a semiconductor device includes: receiving a first substrate with a surface; receiving a second substrate; determining a pad array on the surface of the first substrate, wherein the pad array includes a first type pad and a second type pad; forming a via pattern underlying the pad array in the first substrate according to the location of each via, wherein the first type pad in the pad array is directly contacting a via of the via pattern and the second type pad in the pad array is clear of any via of the via pattern; laterally connecting the second type pad with a conductive trace, wherein the conductive trace connects to another via that is same level with the via contacting the first type pad; and disposing a first conductive bump and a second conductive bump between the first substrate and the second substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device","description":"A method of manufacturing a semiconductor device includes: receiving a first substrate with a surface; receiving a second substrate; determining a pad array on the surface of the first substrate, wher","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510652","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510652","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device\" (US-10510652). https://patentable.app/patents/US-10510652","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510652","json":"https://patentable.app/api/llm-context/US-10510652","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:56:22.993Z"}