{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510743","patent":{"patent_number":"US-10510743","title":"Step fin field-effect-transistor (FinFET) with slim top of fin and thick bottom of fin for electro-static-discharge (ESD) or electrical over-stress (EOS) protection","assignee":null,"inventors":[],"filing_date":"2017-07-18T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":9,"abstract":"An Electro-Static-Discharge (ESD) protection device has a Fin Field-Effect Transistor (FinFET) with a silicon fin with a step separating a top fin and a bottom fin. The gate wraps around the top fin but not the bottom fin. Normal gate-controlled channel conduction occurs in the top fin between a source and a drain in the top fin. Underneath the conducting channel is a buried conducting region in the bottom fin that conducts after a breakdown voltage is reached during ESD. A ledge, abrupt slope change in the sidewalls of the fin, or a doping increase occurs at the step between the top fin and bottom fin. The bottom fin is 2-3 times wider than the top fin, causing the resistance of the buried conducting region to be 2-3 times less than the resistance of the conducting channel, steering breakdown current away from the channel, reducing failures during breakdown."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Step fin field-effect-transistor (FinFET) with slim top of fin and thick bottom of fin for electro-static-discharge (ESD) or electrical over-stress (EOS) protection","description":"An Electro-Static-Discharge (ESD) protection device has a Fin Field-Effect Transistor (FinFET) with a silicon fin with a step separating a top fin and a bottom fin. The gate wraps around the top fin b","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510743","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510743","citation_suggestion":"Patentable. \"Step fin field-effect-transistor (FinFET) with slim top of fin and thick bottom of fin for electro-static-discharge (ESD) or electrical over-stress (EOS) protection\" (US-10510743). https://patentable.app/patents/US-10510743","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510743","json":"https://patentable.app/api/llm-context/US-10510743","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T08:44:24.553Z"}