{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510761","patent":{"patent_number":"US-10510761","title":"Static random access memory device with halo regions having different impurity concentrations","assignee":null,"inventors":[],"filing_date":"2019-01-04T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["G11C","H01L","G11C"],"num_claims":2,"abstract":"In a region just below an access gate electrode in an SRAM memory cell, a second halo region is formed adjacent to a source-drain region and a first halo region is formed adjacent to a first source-drain region. In a region just below a drive gate electrode, a third halo region is formed adjacent to the third source-drain region and a fourth halo region is formed adjacent to a fourth source-drain region. The second halo region is set to have an impurity concentration higher than the impurity concentration of the first halo region. The third halo region is set to have an impurity concentration higher than the impurity concentration of the fourth halo region. The impurity concentration of the first halo region and the impurity concentration of the fourth halo region are different from each other."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Static random access memory device with halo regions having different impurity concentrations","description":"In a region just below an access gate electrode in an SRAM memory cell, a second halo region is formed adjacent to a source-drain region and a first halo region is formed adjacent to a first source-dr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510761","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510761","citation_suggestion":"Patentable. \"Static random access memory device with halo regions having different impurity concentrations\" (US-10510761). https://patentable.app/patents/US-10510761","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510761","json":"https://patentable.app/api/llm-context/US-10510761","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:28:15.146Z"}