{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510773","patent":{"patent_number":"US-10510773","title":"Apparatuses having a ferroelectric field-effect transistor memory array and related method","assignee":null,"inventors":[],"filing_date":"2017-08-28T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"An apparatus comprises field-effect transistor (FET) structures stacked horizontally and vertically in a three-dimensional memory array architecture, gates extending vertically and spaced horizontally between the plurality of FET structures, and a ferroelectric material separating the FET structures and the gates. Individual ferroelectric FETs (FeFETs) are formed at intersections of the FET structures, the gates, and the ferroelectric material. Another apparatus comprises a plurality of bit lines and word lines. Each bit line has at least two sides that are coupled with a ferroelectric material such that each bit line is shared by neighboring gates to form a plurality of FeFETs. A method of operating a memory array comprises applying a combination of voltages to a plurality of word lines and digit lines for a desired operation for a plurality of FeFET memory cells, at least one digit line having the plurality of FeFET memory cells accessible by neighboring gates."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Apparatuses having a ferroelectric field-effect transistor memory array and related method","description":"An apparatus comprises field-effect transistor (FET) structures stacked horizontally and vertically in a three-dimensional memory array architecture, gates extending vertically and spaced horizontally","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510773","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510773","citation_suggestion":"Patentable. \"Apparatuses having a ferroelectric field-effect transistor memory array and related method\" (US-10510773). https://patentable.app/patents/US-10510773","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510773","json":"https://patentable.app/api/llm-context/US-10510773","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:35:09.426Z"}