{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510804","patent":{"patent_number":"US-10510804","title":"Semiconductor structure integrated with magnetic tunneling junction and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2018-09-04T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["G11B","G11C"],"num_claims":20,"abstract":"The present disclosure provides a semiconductor structure including a substrate, a transistor region having a gate over the substrate and a doped region at least partially in the substrate, a first metal layer over the transistor region, and a magnetic tunneling junction (MTJ) between the transistor region and the first metal layer. The present disclosure provides a method for manufacturing a semiconductor structure, including forming a transistor region over a substrate, the transistor region comprising a gate and a doped region, forming a magnetic tunneling junction (MTJ) over the transistor region, electrically coupling to the transistor region, and forming a first metal layer over the MTJ, electrically coupling to the MTJ and the transistor region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure integrated with magnetic tunneling junction and manufacturing method thereof","description":"The present disclosure provides a semiconductor structure including a substrate, a transistor region having a gate over the substrate and a doped region at least partially in the substrate, a first me","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510804","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510804","citation_suggestion":"Patentable. \"Semiconductor structure integrated with magnetic tunneling junction and manufacturing method thereof\" (US-10510804). https://patentable.app/patents/US-10510804","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510804","json":"https://patentable.app/api/llm-context/US-10510804","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T07:05:53.493Z"}