{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510829","patent":{"patent_number":"US-10510829","title":"Secondary use of aspect ratio trapping trenches as resistor structures","assignee":null,"inventors":[],"filing_date":"2018-05-09T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":25,"abstract":"A method for forming a semiconductor structure is disclosed. The method provides a substrate with an insulator pad overlying at least a top portion of the substrate. The method further includes forming a plurality of dielectric columns overlying the substrate and the dielectric pad. Each dielectric column is separated from another dielectric column to form a corresponding plurality of aspect-ration trapping (ART) trenches. The insulator pad spans a bottom portion of a first ART trench of the plurality of ART trenches. A portion of the substrate spans a bottom portion of a second ART trench of the plurality of ART trenches. The method further includes forming a III-V semiconductor material stack in the second ART trench. The method further includes forming a first resistive region in the first ART trench, wherein the first resistive region is in contact with the insulator pad."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Secondary use of aspect ratio trapping trenches as resistor structures","description":"A method for forming a semiconductor structure is disclosed. The method provides a substrate with an insulator pad overlying at least a top portion of the substrate. The method further includes formin","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510829","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510829","citation_suggestion":"Patentable. \"Secondary use of aspect ratio trapping trenches as resistor structures\" (US-10510829). https://patentable.app/patents/US-10510829","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510829","json":"https://patentable.app/api/llm-context/US-10510829","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T07:06:23.367Z"}