{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510832","patent":{"patent_number":"US-10510832","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2018-06-22T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":26,"abstract":"A semiconductor device including: a drift region formed on a semiconductor substrate; a gate trench portion provided on an upper surface of the semiconductor substrate; a first and second mesa portion adjacent to one and the other of the gate trench portions; an accumulation region provided above the drift region in the first mesa portion; a base region provided above the accumulation region; a emitter region provided between the base region and the upper surface of the semiconductor substrate; an intermediate region provided above the drift region in the second mesa portion; a contact region provided above the intermediate region, wherein the gate trench portion has a gate conductive portion; a bottom portion of the gate conductive portion has a first step and second step; and, at least part of the intermediate region is provided between the steps and the bottom portion of the gate trench portion will be provided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"A semiconductor device including: a drift region formed on a semiconductor substrate; a gate trench portion provided on an upper surface of the semiconductor substrate; a first and second mesa portion","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510832","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510832","citation_suggestion":"Patentable. \"Semiconductor device\" (US-10510832). https://patentable.app/patents/US-10510832","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510832","json":"https://patentable.app/api/llm-context/US-10510832","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:36:11.734Z"}