{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510833","patent":{"patent_number":"US-10510833","title":"Method for manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2018-08-28T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":7,"abstract":"A method for manufacturing a semiconductor device comprises forming first groove, depositing, and ion-implanting. At the step of forming the first groove, the first groove is formed in a stacked body comprising a gallium nitride (GaN)-based first semiconductor layer containing an n-type impurity and a gallium nitride (GaN)-based second semiconductor layer stacked on the first semiconductor layer and containing a p-type impurity. The first groove has a bottom portion located in the second semiconductor layer. At the depositing step, a p-type impurity is deposited on side portion and the bottom portion of the first groove. At the ion-implanting step, a p-type impurity is ion-implanted into the first semiconductor layer through the first groove."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing semiconductor device","description":"A method for manufacturing a semiconductor device comprises forming first groove, depositing, and ion-implanting. At the step of forming the first groove, the first groove is formed in a stacked body ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510833","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510833","citation_suggestion":"Patentable. \"Method for manufacturing semiconductor device\" (US-10510833). https://patentable.app/patents/US-10510833","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510833","json":"https://patentable.app/api/llm-context/US-10510833","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:20:55.149Z"}