{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510834","patent":{"patent_number":"US-10510834","title":"High-voltage semiconductor device having a doped isolation region between a level shift region and a high voltage region","assignee":null,"inventors":[],"filing_date":"2017-12-29T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":17,"abstract":"A semiconductor device is disclosed. The semiconductor device includes a substrate structure including a high side region, a low side region, a level shift region and an isolation region. The low side region is separated from the high side region. The level shift region and the isolation region are disposed between the low side region and the high side region. The level shift region is separated from the high side region by the isolation region. A doped isolation region, which is disposed in the isolation region, includes a first doped portion and a second doped portion adjacent to the first doped portion. The depth of the first doped portion is decreased linearly along a first direction from the isolation region to the level shift region. The depth of the second doped portion is decreased linearly along a second direction from the isolation region to the high side region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High-voltage semiconductor device having a doped isolation region between a level shift region and a high voltage region","description":"A semiconductor device is disclosed. The semiconductor device includes a substrate structure including a high side region, a low side region, a level shift region and an isolation region. The low side","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510834","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510834","citation_suggestion":"Patentable. \"High-voltage semiconductor device having a doped isolation region between a level shift region and a high voltage region\" (US-10510834). https://patentable.app/patents/US-10510834","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510834","json":"https://patentable.app/api/llm-context/US-10510834","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:23:55.991Z"}