{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510841","patent":{"patent_number":"US-10510841","title":"Method of manufacturing a silicon carbide semiconductor device","assignee":null,"inventors":[],"filing_date":"2019-04-18T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":8,"abstract":"A silicon carbide semiconductor device includes: n type regions formed on a surface of the n− type epitaxial layer; p type body regions formed at positions deeper than the n type regions; p− type channel regions each reaching the p type body region; and n++ type source regions formed toward the p type body region from the front surface side of the epitaxial layer, and the p− type channel regions and the n++ type source regions are formed at a planar position where the n type region remains between the p− type channel region and the n++ type source region, and out of boundary surfaces which are formed between the p− type channel region and the n type regions, the boundary surface on an outer peripheral side is positioned inside an outer peripheral surface 116a of the p type body region as viewed in a plan view."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing a silicon carbide semiconductor device","description":"A silicon carbide semiconductor device includes: n type regions formed on a surface of the n− type epitaxial layer; p type body regions formed at positions deeper than the n type regions; p− type chan","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510841","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510841","citation_suggestion":"Patentable. \"Method of manufacturing a silicon carbide semiconductor device\" (US-10510841). https://patentable.app/patents/US-10510841","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510841","json":"https://patentable.app/api/llm-context/US-10510841","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:39:13.404Z"}