{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510851","patent":{"patent_number":"US-10510851","title":"Low resistance contact method and structure","assignee":null,"inventors":[],"filing_date":"2017-05-01T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A device includes a metal-silicide region formed in a semiconductor material in a contact opening. A concentration of a material, including chlorine, fluorine, or a combination thereof is in the metal-silicide region near an uppermost surface of the metal-silicide region. The presence of chlorine or fluorine results from a physical bombarding of the chlorine or fluorine in the contact opening. As a result of the physical bombard, the opening becomes wider at the bottom of the opening and the sidewalls of the opening are thinned. A capping layer is over the metal-silicide region and over sidewalls of a contact plug opening. A contact plug is formed over the capping layer, filling the contact plug opening. Before the contact plug is formed, a silicidation occurs to form the metal-silicide and the metal-silicide is wider than the bottom of the opening."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Low resistance contact method and structure","description":"A device includes a metal-silicide region formed in a semiconductor material in a contact opening. A concentration of a material, including chlorine, fluorine, or a combination thereof is in the metal","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510851","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510851","citation_suggestion":"Patentable. \"Low resistance contact method and structure\" (US-10510851). https://patentable.app/patents/US-10510851","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510851","json":"https://patentable.app/api/llm-context/US-10510851","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:56:17.079Z"}