{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510855","patent":{"patent_number":"US-10510855","title":"Transistor layout to reduce kink effect","assignee":null,"inventors":[],"filing_date":"2018-05-25T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"The present disclosure, in some embodiments, relates to a transistor device within an active area having a shape configured to reduce a susceptibility of the transistor device to performance degradation (e.g., the kink effect) caused by divots in an adjacent isolation structure. The transistor device has a substrate including interior surfaces defining a trench within an upper surface of the substrate. One or more dielectric materials are arranged within the trench. The one or more dielectric materials define an opening exposing the upper surface of the substrate. The opening has a source opening over a source region within the substrate, a drain opening over a drain region within the substrate, and a channel opening between the source opening and the drain opening. The source opening and the drain opening have widths smaller than the channel opening. A gate structure extends over the opening between the source and drain regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Transistor layout to reduce kink effect","description":"The present disclosure, in some embodiments, relates to a transistor device within an active area having a shape configured to reduce a susceptibility of the transistor device to performance degradati","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510855","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510855","citation_suggestion":"Patentable. \"Transistor layout to reduce kink effect\" (US-10510855). https://patentable.app/patents/US-10510855","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510855","json":"https://patentable.app/api/llm-context/US-10510855","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:37:13.097Z"}