{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510865","patent":{"patent_number":"US-10510865","title":"Cap layer and anneal for gapfill improvement","assignee":null,"inventors":[],"filing_date":"2018-04-13T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"Embodiments disclosed herein relate generally to forming a gate layer in high aspect ratio trenches using a cyclic deposition-etch process. In an embodiment, a method for semiconductor processing is provided. The method includes performing a cyclic deposition-etch process to form a conformal film over a bottom surface and along sidewall surfaces of a feature on a substrate. The method includes forming a dielectric cap layer on the conformal film. The method includes performing an anneal process on the conformal film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Cap layer and anneal for gapfill improvement","description":"Embodiments disclosed herein relate generally to forming a gate layer in high aspect ratio trenches using a cyclic deposition-etch process. In an embodiment, a method for semiconductor processing is p","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510865","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510865","citation_suggestion":"Patentable. \"Cap layer and anneal for gapfill improvement\" (US-10510865). https://patentable.app/patents/US-10510865","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510865","json":"https://patentable.app/api/llm-context/US-10510865","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:50:59.858Z"}