{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510869","patent":{"patent_number":"US-10510869","title":"Devices and methods for a power transistor having a Schottky or Schottky-like contact","assignee":null,"inventors":[],"filing_date":"2018-03-21T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"Devices, structures, and methods thereof for providing a Schottky or Schottky-like contact as a source region and/or a drain region of a power transistor are disclosed. A power transistor structure comprises a substrate of a first dopant polarity, a drift region formed on or within the substrate, a body region formed on or within the drift region, a gate structure formed on or within the substrate, a source region adjacent to the gate structure, a drain region formed adjacent to the gate structure. At least one of the source region and the drain region is formed from a Schottky or Schottky-like contact substantially near a surface of the substrate, comprising a silicide layer and an interfacial dopant segregation layer. The Schottky or Schottky-like contact is formed by low-temperature annealing a dopant segregation implant in the source and/or drain region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Devices and methods for a power transistor having a Schottky or Schottky-like contact","description":"Devices, structures, and methods thereof for providing a Schottky or Schottky-like contact as a source region and/or a drain region of a power transistor are disclosed. A power transistor structure co","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510869","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510869","citation_suggestion":"Patentable. \"Devices and methods for a power transistor having a Schottky or Schottky-like contact\" (US-10510869). https://patentable.app/patents/US-10510869","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510869","json":"https://patentable.app/api/llm-context/US-10510869","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:24:00.262Z"}