{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510884","patent":{"patent_number":"US-10510884","title":"Method for fabricating a semiconductor device","assignee":null,"inventors":[],"filing_date":"2018-08-07T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":6,"abstract":"A method for fabricating a semiconductor device is disclosed. A dummy gate is formed on a semiconductor substrate. The dummy gate has a first sidewall and a second sidewall opposite to the first sidewall. A low-k dielectric layer is formed on the first sidewall of the dummy gate and the semiconductor substrate. A spacer material layer is deposited on the low-k dielectric layer, the second sidewall of the dummy gate, and the semiconductor substrate. The spacer material layer and the low-k dielectric layer are etched to form a first spacer structure on the first sidewall and a second spacer structure on the second sidewall. A drain doping region is formed in the semiconductor substrate adjacent to the first spacer structure. A source doping region is formed in the semiconductor substrate adjacent to the second spacer structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for fabricating a semiconductor device","description":"A method for fabricating a semiconductor device is disclosed. A dummy gate is formed on a semiconductor substrate. The dummy gate has a first sidewall and a second sidewall opposite to the first sidew","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510884","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510884","citation_suggestion":"Patentable. \"Method for fabricating a semiconductor device\" (US-10510884). https://patentable.app/patents/US-10510884","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510884","json":"https://patentable.app/api/llm-context/US-10510884","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T10:38:52.134Z"}