{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510891","patent":{"patent_number":"US-10510891","title":"Field effect transistor contact with reduced contact resistance using implantation process","assignee":null,"inventors":[],"filing_date":"2019-07-08T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Embodiments disclosed herein relate generally to forming an ultra-shallow junction having high dopant concentration and low contact resistance in a p-type source/drain region. In an embodiment, a method includes forming a source/drain region in an active area on a substrate, the source/drain region comprising germanium, performing an ion implantation process using gallium (Ga) to form an amorphous region in the source/drain region, performing an ion implantation process using a dopant into the amorphous region, and subjecting the amorphous region to a thermal process."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Field effect transistor contact with reduced contact resistance using implantation process","description":"Embodiments disclosed herein relate generally to forming an ultra-shallow junction having high dopant concentration and low contact resistance in a p-type source/drain region. In an embodiment, a meth","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510891","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510891","citation_suggestion":"Patentable. \"Field effect transistor contact with reduced contact resistance using implantation process\" (US-10510891). https://patentable.app/patents/US-10510891","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510891","json":"https://patentable.app/api/llm-context/US-10510891","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:00:43.819Z"}