{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510893","patent":{"patent_number":"US-10510893","title":"Method for fabricating FinFET isolation structure","assignee":null,"inventors":[],"filing_date":"2018-01-21T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for forming a semiconductor device is provided. In this method, a stop layer is formed on a semiconductor substrate. A semiconductor fin is formed on the stop layer. Two cells adjacent to each other are formed on the semiconductor fin. A gate conductor is formed on a top of the semiconductor fin at a common boundary that is shared by the two cells. A gate spacer is formed to peripherally enclose the gate conductor. The gate conductor and the semiconductor fin are etched to form a gap extending from the top of the semiconductor fin to the stop layer, thereby dividing the semiconductor fin into two portions of the semiconductor fin. The gap is filled with a dielectric filler."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for fabricating FinFET isolation structure","description":"A method for forming a semiconductor device is provided. In this method, a stop layer is formed on a semiconductor substrate. A semiconductor fin is formed on the stop layer. Two cells adjacent to eac","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510893","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510893","citation_suggestion":"Patentable. \"Method for fabricating FinFET isolation structure\" (US-10510893). https://patentable.app/patents/US-10510893","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510893","json":"https://patentable.app/api/llm-context/US-10510893","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:28:38.218Z"}