{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10510906","patent":{"patent_number":"US-10510906","title":"MOS capacitor, semiconductor fabrication method and MOS capacitor circuit","assignee":null,"inventors":[],"filing_date":"2016-07-01T00:00:00.000Z","publication_date":"2019-12-17T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":17,"abstract":"A metal-oxide-semiconductor (MOS) capacitor is disclosed. The MOS capacitor includes a front-end-of-the-line (FEOL) field effect transistor (FET), and a plurality of middle-end-of-the-line (MEOL) conductive structures. The FEOL FET includes a source region and a drain region positioned in a semiconductor substrate, and a gate over the semiconductor substrate. The plurality of MEOL conductive structures is disposed on a top surface of the gate. At least one of the MEOL conductive structures is electrically disconnected from a back-end-of-the-line (BEOL) metal layer. A semiconductor fabrication method and a MOS capacitor circuit are also disclosed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"MOS capacitor, semiconductor fabrication method and MOS capacitor circuit","description":"A metal-oxide-semiconductor (MOS) capacitor is disclosed. The MOS capacitor includes a front-end-of-the-line (FEOL) field effect transistor (FET), and a plurality of middle-end-of-the-line (MEOL) cond","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10510906","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10510906","citation_suggestion":"Patentable. \"MOS capacitor, semiconductor fabrication method and MOS capacitor circuit\" (US-10510906). https://patentable.app/patents/US-10510906","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10510906","json":"https://patentable.app/api/llm-context/US-10510906","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:03:55.713Z"}