{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10513797","patent":{"patent_number":"US-10513797","title":"Manufacturing method of epitaxial silicon wafer","assignee":null,"inventors":[],"filing_date":"2015-10-06T00:00:00.000Z","publication_date":"2019-12-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":2,"abstract":"A manufacturing method of an epitaxial silicon wafer, using an epitaxial growth apparatus including a susceptor and a heat ring, includes: determining a surface position of a silicon wafer to be higher than a surface position of a peripheral portion of the susceptor and to be lower than a surface position of the heat ring; and adjusting a gap between the surface position of the silicon wafer and the surface position of the heat ring to control a difference between a film thickness of the epitaxial layer formed on a peripheral portion in a <110> orientation of the silicon wafer and a film thickness of the epitaxial layer formed on the peripheral portion in a <100> orientation of the silicon wafer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Manufacturing method of epitaxial silicon wafer","description":"A manufacturing method of an epitaxial silicon wafer, using an epitaxial growth apparatus including a susceptor and a heat ring, includes: determining a surface position of a silicon wafer to be highe","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10513797","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10513797","citation_suggestion":"Patentable. \"Manufacturing method of epitaxial silicon wafer\" (US-10513797). https://patentable.app/patents/US-10513797","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10513797","json":"https://patentable.app/api/llm-context/US-10513797","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:17:51.509Z"}